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TK60P03M1

Toshiba Semiconductor

MOSFETs


Description
TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK60P03M1 1. Applications DC-DC Converters Desktop Computers 2. Features (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to ...



Toshiba Semiconductor

TK60P03M1

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