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TK35S04K3L

Toshiba Semiconductor
Part Number TK35S04K3L
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current:...
Published Sep 4, 2014
Datasheet PDF File TK35S04K3L PDF File


TK35S04K3L
TK35S04K3L


Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circui...



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