Document
GT10Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q301
High Power Switching Applications Motor Control Applications
Unit: mm
· · · · ·
The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 1200 ±20 10 20 10 20 140 150 −55 to 150 Unit V V A
JEDEC
A
― ― 2-16C1C
JEITA TOSHIBA
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
W °C °C
Weight: 4.6 g (typ.)
Equivalent Circuit
Collector
Gate Emitter
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Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 10 A, VGE = 0 IF = 10 A, di/dt = −200 A/µs ― ― Inductive load VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note) Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Min ― ― 4.0 ― ― ― ― ― ― ― ― ― ― Typ. ― ― ― 2.1 600 0.07 0.30 0.16 0.50 ― ― ― ― Max ±500 1.0 7.0 2.7 ― ― ― µs 0.32 ― 3.0 350 0.89 1.79 V ns °C/W °C/W Unit nA mA V V pF
Note: Switching time measurement circuit and input/output waveforms
VGE RG −VGE IC RG L VCE 0 VCC IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0
90% 10%
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IC – VCE
20 Common emitter Tc = 25°C 16 20 12 15 13 20 Common emitter
VCE – VGE
(V)
12
Tc = −40°C 16
(A)
IC
Collector-emitter voltage
VCE
VGE = 10 V
12
Collector current
8
8
4
4
IC = 4 A
10
20
0 0
1
2
3
4
5
0 0
4
8
12
16
20
Collector-emitter voltage
VCE
(V)
Gate-emitter voltage VGE
(V)
VCE – VGE
20 Common emitter 20 Common emitter Tc = 25°C 16
VCE – VGE
(V)
(V)
Tc = 125°C 16
VCE
Collector-emitter voltage
12
Collector-emitter voltage
VCE
IC = 4 A 10 20
12
8
8 IC = 4 A 4 10 20
4
0 0
)
4 8 12 16 20 0 0
4
8
12
16
20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
IC – VGE
20 Common emitter 4 Common emitter
VCE (sat) – Tc
20
Collector-emitter saturation voltage VCE (sat) (V)
VCE = 5 V
(A)
16
VGE = 15 V 3 10
IC Collector current
12
2 IC = 4 A
8 25 4 Tc = 125°C 0 0 −40
1
4
8
12
16
20
0 −60
−20
20
60
100
140
Gate-emitter voltage VGE
(V)
Case temperature Tc
(°C)
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Switching Time ton, tr – RG
1 1
Switching Time ton, tr – IC
0.5
(µs)
0.3
(µs) ton, tr
ton
0.3 ton 0.1
ton, tr Switching time
0.1 0.05 0.03
tr Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C 5 10 30 50 100 300 500
Switching time
0.03
tr
0.01 3
0.01 0
Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C 2 4 6 8 10 12
Gate resistance RG
(Ω)
Collector current
IC
(A)
Switching Time toff, tf – RG
3 Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C 3
Switching Time toff, tf – IC
Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C
(µs)
1 0.5 0.3
(µs)
1
toff, tf
toff
toff, tf
toff 0.3
Switching time
tf 0.1 0.05 0.03 3
Switching time
tf 0.1
5
10
30
50
100
300 500
0.05 0
2
4
6
8
10
12
Gate resistance RG
(Ω)
Collector current
IC
(A)
Switching Loss Eon, Eoff – RG
10 5 3 Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C Eon 1 Eoff 0.5 0.3 10
Switching Loss Eon, Eoff – IC
Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C
Eon, Eoff (mJ)
Eon, Eoff (mJ)
3
1
0.3
Switching loss
Switching loss
Eon Eoff
0.1
0.03
0.1 3
5
10
30
50
100
300 500
0.01 0
2
4
6
8
10
12
Gate resistance RG
(Ω)
Collector current
IC
(A)
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C – VCE
3000 1000 1000
VCE, VGE – QG
Common emitter RL = 60 Ω Tc = 25°C 20
(pF)
VCE
800
16
300 100 Coes 30 10 Common emitter 3 VGE = 0 f = 1 MHz Tc = 25°C 1 0.1 0.3 1 Cres
Collector-emitter voltage
Capacitance C
600
600
400
12
400
VCE = 200 V
8
200
4
3
10
30
100
300
1000
0 0
20
40
60
80
0 100
Collector-emitter voltage
VCE
(V)
Gate charge
QG
(nC)
IF – VF
20 100
trr, Irr – IF
1000
(A)
16
(A)
Reverse recovery current Irr
Forward current IF
12
25
10 Irr
100
8 Tc= 125°C 4
−40
3
Common collector VGE = 0 0 0 1 2 3 4 5
Common collector di/dt = −200 A/µs VGE = 0 : Tc = 25°C : Tc = 125°C 2 4 6 8 10
)
1 0
10 12
Forward voltage
VF
(V)
Forward current
IF
(A)
Safe Operating Area
100 50 100 50 30 100 µs* 50 µs*
Reverse Bias SOA
(A)
30 IC max .