GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TYP.) (IC = 15A) Unit: mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERIST...
