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GT10G131

Part Number	GT10G131
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Features	GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm ...
Published	Sep 3, 2014
Datasheet	GT10G131 PDF File

Features

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak...

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