D467

2SD467 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB561 Outline TO-92 (1) www.DataSheet.co.kr 1. Emitter 2. Collector 3. Base 3 2 1 Datasheet pdf - http://www.DataSheet4U.net/ 2SD467 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — www.DataSheet.co.kr Max — — — 1.0 240 0.5 1.0 — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO hFE* — — 0.19 0.76 280 12 85 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD467 is grouped by h FE as follows. 2 Datasheet pdf - http://www.DataSheet4U...