K2568

2SK2568 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2568 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID* 2 1 Ratings 500 ±30 12 48 12 Unit V V A A A W °C °C I D(pulse)* I DR* 2 2 Pch* Tch Tstg 100 150 –55 to +150 2 2SK2568 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 500 ±30 — — 2.0 — 6.0 — — — — — — — — — Typ — — — — — 0.5 10 1560 450 72 22 78 140 60 1.1 105 Max — — ±10 250 3.0 0.6 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0 diF / dt = 100 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V*1 ID = 6 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer ad...