P1504EDG

NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P1504EDG TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 15mΩ ID -45A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range 2 1 SYMBOL VDS VGS LIMITS -40 ±20 -45 -36 -150 -45 102 50 32 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH Tc = 25 °C Tc = 70 °C EAS PD TJ, Tstg mJ W °C -55 to 150 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1 2 SYMBOL RθJA RθJC TYPICAL MAXIMUM 75 2.5 UNITS °C / W Pulse width limited by maximum junction temperature. VDD = -20V . Starting TJ = 25˚C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 55 °C -40 -1.7 -2.2 -3 ±100 1 10 µA nA V LIMITS UNIT MIN TYP MAX REV1.6 1 Dec-02-2010 NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P1504EDG TO-252 Halogen-Free & Lead-Free Drain-Source On-State 1 Resistance Forward Transconductance On-State Drain Current 1 1 ...