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TPN11006NL

Toshiba
Part Number TPN11006NL
Manufacturer Toshiba
Description MOSFETs
Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) ...
Published Aug 29, 2014
Datasheet PDF File TPN11006NL PDF File


TPN11006NL
TPN11006NL

Features
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V...


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