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TPN22006NH Dataheets PDF



Part Number TPN22006NH
Manufacturers Toshiba
Logo Toshiba
Description MOSFETs
Datasheet TPN22006NH DatasheetTPN22006NH Datasheet (PDF)

TPN22006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN22006NH 1. Applications • • • Switching Voltage Regulators Motor Drivers DC-DC Converters 2. Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1,.

  TPN22006NH   TPN22006NH


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TPN22006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN22006NH 1. Applications • • • Switching Voltage Regulators Motor Drivers DC-DC Converters 2. Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 1 2012-08 2014-01-07 Rev.2.0 TPN22006NH 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Silicon limit) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 60 ±20 21 9 42 18 1.9 0.7 21 9 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 6.94 65.7 178 Unit /W /W /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 48 V, Tch = 25 (initial), L = 0.2 mH, IAR = 9 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-01-07 Rev.2.0 TPN22006NH 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 6) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.1 mA VGS = 6.5 V, ID = 4.5 A VGS = 10 V, ID = 4.5 A Min   60 45 2.0   Typ.      28 18 Max ±0.1 10   4.0 64 22 mΩ V Unit µA Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss rg tr ton tf toff  See Figure 6.2.1. Test Condition VDS = 30 V, VGS = 0 V, f = 1 MHz Min         Typ. 710 14 235 1.0 4.6 13 3.3 13 Max    1.5     Ω ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Symbol Qg Qgs1 Qgd QSW Test Condition VDD ≈ 30 V, VGS = 10 V, ID = 9 A Min     Typ. 12 3.9 3.0 4.5 Max     Unit nC 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Reverse drain current (pulsed) Diode forward voltage (Note 7) Symbol IDRP VDSF Test Condition  IDR = 9 A, VGS = 0 V Min   Typ.   Max 42 -1.2 Unit A V Note 7: Ensure that the channel temperature does not exceed 150. 3 2014-01-07 Rev.2.0 TPN22006NH 7. Marking Fig. 7.1 Marking 4 2014-01-07 Rev.2.0 TPN22006NH 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2014-01-07 Rev.2.0 TPN22006NH Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) Fig. 8.12 PD - Tc (Guaranteed Maximum).


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