Document
TPN22006NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN22006NH
1. Applications
• • • Switching Voltage Regulators Motor Drivers DC-DC Converters
2. Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
Start of commercial production
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2012-08 2014-01-07 Rev.2.0
TPN22006NH
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Silicon limit) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 60 ±20 21 9 42 18 1.9 0.7 21 9 150 -55 to 150 W W W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 6.94 65.7 178 Unit /W /W /W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 48 V, Tch = 25 (initial), L = 0.2 mH, IAR = 9 A
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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2014-01-07 Rev.2.0
TPN22006NH
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 6) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.1 mA VGS = 6.5 V, ID = 4.5 A VGS = 10 V, ID = 4.5 A Min 60 45 2.0 Typ. 28 18 Max ±0.1 10 4.0 64 22 mΩ V Unit µA
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss rg tr ton tf toff See Figure 6.2.1. Test Condition VDS = 30 V, VGS = 0 V, f = 1 MHz Min Typ. 710 14 235 1.0 4.6 13 3.3 13 Max 1.5 Ω ns Unit pF
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Symbol Qg Qgs1 Qgd QSW Test Condition VDD ≈ 30 V, VGS = 10 V, ID = 9 A Min Typ. 12 3.9 3.0 4.5 Max Unit nC
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics Reverse drain current (pulsed) Diode forward voltage (Note 7) Symbol IDRP VDSF Test Condition IDR = 9 A, VGS = 0 V Min Typ. Max 42 -1.2 Unit A V
Note 7: Ensure that the channel temperature does not exceed 150.
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TPN22006NH
7. Marking
Fig. 7.1 Marking
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2014-01-07 Rev.2.0
TPN22006NH
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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2014-01-07 Rev.2.0
TPN22006NH
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta (Guaranteed Maximum)
Fig. 8.12 PD - Tc (Guaranteed Maximum).