HCS241MS

HCS241MS September 1995 Radiation Hardened Inverting Octal Three-State Buffer/Line Driver Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW AE AI1 BO4 AI2 BO3 AI3 BO2 AI4 1 2 3 4 5 6 7 8 9 20 VCC 19 BE 18 AO1 17 BI4 16 AO2 15 BI3 14 AO3 13 BI2 12 AO4 11 BI1 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse Latch Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% VCC Max - VIH = 70% VCC Min Input Compatibility Levels Ii ≤ 5µA at VOL, VOH BO1 GND 10 20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH C TOP VIEW AE AI1 BO4 AI2 BO3 AI3 BO2 AI4 BO1 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC BE AO1 BI4 AO2 BI3 AO3 BI2 AO4 BI1 Description The Intersil HCS241MS is a Radiation Hardened inverting octal three-state buffer/line driver with two output enables, one active low, and one active high. The HCS241MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS241MS is supplied...