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Voltage detectors
BD45XXXG BD46XXXG
VOLTAGE DETECTOR IC with counter timer
BD45XXXG BD46XXXG
BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in counter timer to require no external capacitor. Total 156 types of VOLTAGE DETECTOR ICs including BD45XXXG series (Nch open drain output) and BD46XXXG series (CMOS output), each of which has 26 kinds in every 0.1V step (2.3~4.8V) and three kinds of delay time (50msec, 100msec, 200msec) have developed.
Applications Every kind of appliances with microcontroller and logic circuit Features 1) Built-in delay time circuit 2) No external capacitor for setting delay time required 3) 3 kinds of delay time: 50msec(Typ.)(BD45XX5G,BD46XX5G) 100msec(Typ.)(BD45XX1G,BD46XX1G) 200msec(Typ.)(BD45XX2G,BD46XX2G) 4) Detection voltage: 2.3V ~ 4.8V 0.1V step 5) High-accuracy detection voltage: ±1.0% 6) Ultra low current consumption: 0.85µA typ. 7) Output circuit: Nch open drain(BD45XXXG) CMOS(BD46XXXG) 8) Package: SSOP5(SMP5C2) 9) Operating temperature range: -40°C ~ +105°C Application Circuit
BD45XXXG
VDD VDD VDD
BD45XXXG BD46XXXG
5 4
1pin : External RESET control 2pin : Connect to Sub, GND 3pin : GND 4pin : VOUT 5pin : VDD
(Fixed delay time by the built-in ±10% of high-accuracy counter timer)
1
2
3
2.9±0.2 (5) (4) 2.8±0.2 0.2 1.6 + –0.1
(UNIT:mm)
(1) (2) (3) 1.25MAX 1.1± 0.05±0.05 0.05
0.95
0.05 0.42 + –0.04
0.1
SSOP5(SMP5C2)
BD46XXXG
VDD VDD
Vout
Oscillation circuit counter timer
Reset
Oscillation circuit counter timer
0.2MIN 0.13 +0.05 –0.03
Vout Reset
Vref
Vref
GND
ER
GND
ER
Pin No. SSOP5
1 ER
2 Sub
3 GND
4 VOUT
5 VDD
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Voltage detectors
Absolute Maximum Ratings (Ta=25˚C)
Power supply voltage VDD – GND Output Nch open drain output VOUT voltage CMOS output ER pin input voltage VCT Power dissipation:SSOP5 ∗1 Pd Operating temperature range Topr Tstg Storage temperature range
BD45XXXG BD46XXXG
Symbol Limits – 0.3 ~ + 10 GND – 0.3 ~ + 10 GND – 0.3 ~ VDD + 0.3 GND – 0.3 ~ VDD + 0.3 540 – 40 ~ + 105 – 55 ~ + 125 Unit V V V
Parameter
∗1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
mW ˚C ˚C
Electrical characteristics (Unless otherwise noted; Ta=-25˚C ~ +105˚C)
Detection voltage temperature coefficient Hysteresis voltage Circuit current when ON
Parameter
Symbol
∗1 ∗1
Min. —
Typ. ±100
Max. ±360
Unit % µA µA V mA mA µA V V V µA
Conditions RL=470KΩ, VDD=L→H→L VDET=2.3~3.1V VDD=VDET–0.2V VDET=3.2~4.2V VDET=4.3~4.8V VDET=2.3~3.1V VDET=3.2~4.2V VDD=VDET+2V VDET=4.3~4.8V RL=470kΩ, VOL≥0.4V VDS=0.5V, VDD=1.2V VDS=0.5V, VDD=2.4V (VDET≥2.7V) VDS=0.5V, VDD=4.8V VDET=2.3~4.2V VDS=0.5V, VDD=6.0V VDET=4.3~4.8V VDD=VDS=10V BD45XX5G, BD46XX5G RL=100kΩ BD45XX1G, BD46XX1G CL=100pF BD45XX2G, BD46XX2G VER=2.0V
VDET/∆T
ppm/˚C Ta=-40˚C ~ +105˚C
∗1
Circuit current when OFF Min. operating voltage "L" output current "H" output current Output leak current "H" transmission delay time ER pin "H" voltage ER pin "L" voltage ER pin input current
∗1 ∗1 ∗1
∗1 ∗1
∗1 This value is guranteed at Ta=25˚C. Note) RL is not necessary for CMOS output type. Note) Please refer to the detection voltage of Line-up table.
∆VDET VDETX0.03 VDETX0.05 VDETX0.08 — 0.70 2.10 — 0.75 2.25 Icc1 — 0.80 2.40 — 0.75 2.25 Icc2 — 0.80 2.40 — 0.85 2.55 VOPL 0.95 — — 0.4 1.2 — IOL 2.0 5 — — 1.0 2.2 IOH 1.2 2.7 — — — 0.1 Ilaek 45 50 55 tPLH 90 100 110 180 200 220 2.0 — — VEH VEL — — 0.8 IER — 1 10
Characteristic diagram and Measurement circuit
250 200
Output delay time "L → H"
(BD4x28xG tPLH)
BD45282G
50 40
Output delay time "H → L"
(BD4x28x tPLH)
tPLH (msec)
150 100 50 0 -60
BD45281G
tPLH [µsec]
30 20 10 0 -60
BD45285G
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Ta (°C)
5V RL=100kΩ VOUT GND 100pF VDET±0.5V ER
Ta (°C)
5V RL=100kΩ VOUT GND 100pF
VDD ER VDET±0.5V
VDD
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Voltage detectors
Circuit current
(BD45281G)
1.5
BD45XXXG BD46XXXG
18
"L" output current
(BD45281G)
15
"H" output current
(BD46281G)
15
VDD=6.0V
IDD (µA)
IOL (mA)
IDS (mA)
1.0
10
VDD=2.4V
10
VDD=4.8V
0.5
5
5
VDD=1.2V 0 1 2 3 4 5 VDD (V) 6 7 8 9 10 0 0.5 1 1.5 2 2.5
2 0 1 2 3 VDS (V) 4 5 6
VDS (V)
A
VDD ER
VDS VDD VOUT GND VDD ER GND VDD VOUT VDD ER GND VDS VDD VOUT
A
A
I/O characteristic
9 8 7 6 VOUT (V) VDET (V) 5 4 3 2 1 0 0.5 Ta=25˚C 1 1.5 2 2.5 3 VDD (V) 3.5 4 4.5 5 5.5 –40 Ta=25˚C 3.4
Detection voltage
5.4 5.0 4.6 4.2 3.8
(BD45421G)
(BD45421G)
low to high(VDET+∆VDET)
high to low(VDET)
0
Ta (˚C)
50
90
VDD VDD ER GND VOUT
RL=470KΩ VDD ER
VDD VOUT GND
RL=470KΩ
V
V
Timing waveform
VDD VDET+∆VDET VDET 0V
VDD
VOUT
VOH tPLH VOL tPHL tPLH tPHL tPLH
ER
VEH
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Voltage detectors
Part number and Marking of samples
Voltage Marking Part No. Marking Part No. Marking Part No. Marking Part No. Marking Pa.