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IPD320N20N3G Dataheets PDF



Part Number IPD320N20N3G
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD320N20N3G DatasheetIPD320N20N3G Datasheet (PDF)

IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 200 32 34 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G Package Marking PG-TO252-3 .

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IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 200 32 34 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G Package Marking PG-TO252-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 34 24 136 190 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=34 A, R GS=25 Ω mJ V W °C T C=25 °C 136 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.2 page 1 2009-10-22 IPD320N20N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 1.1 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=90 µA V DS=160 V, V GS=0 V, T j=25 °C V DS=160 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=34 A V GS=20 V, V DS=0 V V GS=10 V, I D=34 A 200 2 3 0.1 4 1 µA V 28 10 1 27 2.5 55 100 100 32 nA mΩ Ω S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.2 page 2 2009-10-22 IPD320N20N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=17 A, R G=1.6 Ω V GS=0 V, V DS=100 V, f =1 MHz - 1770 135 4 11 9 21 4 2350 180 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=17 A, V GS=0 to 10 V - 8 3 5 22 4.4 54 29 72 nC V nC IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=34 A, T j=25 °C V R=100 V, I F=17A , di F/dt =100 A/µs - 1 110 500 34 136 1.2 - A V ns nC See figure 16 for gate charge parameter d.


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