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IPD30N06S3L-20

Infineon
Part Number IPD30N06S3L-20
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N06S3L-20 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 20 30 V mΩ A Features • N-channel ...
Datasheet PDF File IPD30N06S3L-20 PDF File

IPD30N06S3L-20
IPD30N06S3L-20

Overview
IPD30N06S3L-20 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 20 30 V mΩ A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3L-20 Package PG-TO252-3-11 Marking 3N06L20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperatur...


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