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IPD30N03S4L-09 Dataheets PDF



Part Number IPD30N03S4L-09
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD30N03S4L-09 DatasheetIPD30N03S4L-09 Datasheet (PDF)

IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10.

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IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=30A T C=25°C Value 30 30 120 28 30 ±16 42 -55 ... +175 55/175/56 mJ A V W °C − Unit A Rev. 1.0 page 1 2008-08-20 IPD30N03S4L-09 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=13µA V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.5V, I D=15A V GS=10V, I D=30A 30 1.0 1.5 0.1 2.2 1 µA V 3.6 62 40 K/W - 10 10.4 7.3 100 100 13.5 9.0 nA mΩ Rev. 1.0 page 2 2008-08-20 IPD30N03S4L-09 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25°C V GS=0V, I F=30A, T j=25°C V R=30V, I F=I S, di F/dt =100A/µs 0.6 0.95 30 120 1.3 V A Q gs Q gd Qg V plateau V DD=24V, I D=30A, V GS=0 to 10V 4 2 15 3.4 5 4 20 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15V, V GS=10V, I D=30A, R G=1.6Ω V GS=0V, V DS=15V, f =1MHz 1170 320 11 3 1 12 5 1520 420 22 ns pF Reverse recovery time2) t rr - 12 - ns Reverse recovery charge2) 1) Q rr - 10 - nC Current is limited by bondwire; with an R thJC = 3.6K/W the chip is able to carry 52A at 25°C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2008-08-20 IPD30N03S4L-09 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 6 V 50 35 30 40 25 30 P tot [W] 20 I D [A] 20 10 0 0 50 100 150 200 15 10 5 0 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 0.5 1 µs 10 0 100 0.1 Z thJC [K/W] 10 µs 0.05 I D [A] 100 µs 10-1 0.01 10 1 ms single pulse 10 -2 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2008-08-20 IPD30N03S4L-09 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 120 10 V 5V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 40 3V 3.5 V 4V 35 100 30 80 4.5 V 4.5 V 25 60 R DS(on) [mΩ] I D [A] 4V 20 15 40 3.5 V 10 5 0 5V 10 V 20 3V 0 0 1 2 3 4 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 120 -55 °C 25 °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 30 A; V GS = 10 V 13 12 100 175 °C 11 80 10 R DS(on) [mΩ] 0 1 2 3 4 5 6 I D [A] 9 8 7 6 5 60 40 20 0 4 -60 -20 20 60 100 140 180 V GS [V] T j [°C] Rev. 1.0 page 5 2008-08-20 IPD30N03S4L-09 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2 1.75 130 µA 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 1.5 13 µA 1.25 V GS(th) [V] C [pF] 103 Ciss 1 0.75 0.5 0.25 Coss 102 Crss 0 -60 -20 20 60 100 140 180 10 1 0 5 10 15 20 25 30 T j [°C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 25 °C 10 2 10 150 °C 100 °C 101 25 °C I AV [A] 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 0.1 1 10 100 1000 I F [A] V SD [V] t AV [µs] Rev. 1.0 page 6 2008-08-20 IPD30N03S4L-09 13 Avalanche energy E AS = f(T j) parameter: I D 125 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 34 33 100 7.5 A 32 V BR(DSS) [V] 15 A 30 A 75 .


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