Document
PMK35EP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 29 April 2010 Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
1.3 Applications
Battery management Load switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -10 V; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 Min Typ Max Unit -30 -14. 9 6.9 V A W
Static characteristics RDSon VGS = -10 V; ID = -9.2 A; Tj = 25 °C; see Figure 9 16 19 mΩ
Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -9.2 A; VDS = -15 V; Tj = 25 °C; see Figure 11; see Figure 12 6 nC
NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S S S G D D D D source source source gate drain drain drain drain
1 4 S
001aaa025
Simplified outline
8 5
Graphic symbol
D
G
SOT96-1 (SO8)
3. Ordering information
Table 3. Ordering information Package Name PMK35EP SO8 Description plastic small outline package; 8 leads; body width 3.9 mm Version SOT96-1 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tsp = 25 °C; VGS = -10 V; see Figure 1; see Figure 3 Tsp = 100 °C; VGS = -10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 °C Tsp = 25 °C; tp ≤ 10 µs; pulsed Tsp = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tsp = 25 °C; see Figure 2 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min -25 -55 -55 Typ Max -30 -30 25 -14.9 -7 -28.8 6.9 150 150 -5.8 -23 Unit V V V A A A W °C °C A A
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
PMK35EP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 April 2010
2 of 12
NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
120 Ider (%) 80
003aab604
120 Pder (%) 80
003aab948
40
40
0 0 50 100 150 Tj (°C) 200
0 0 50 100 150 Tsp (°C) 200
Fig 1.
Normalized continuous drain current as a function of solder point temperature
Fig 2.
Normalized total power dissipation as a function of solder point temperature
003aab603
−102 Limit RDSon = VDS / ID ID (A) −10 1 ms tp = 10 μs
10 ms −1 DC 100 ms
−10−1 −10−1
−1
−10
VDS (V)
−102
Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions see Figure 4 Min Typ Max 18 Unit K/W
PMK35EP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 April 2010
3 of 12
NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
102 Zth(j−sp) (K / W) 10 δ = 0.5 0.2 0.1 1 0.05 0.02
P
003aab605
δ=
tp T
10−1
single pulse
tp
t T
10−2 10−4
10−3
10−2
10−1
1 tp (s)
10
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = -250 µA; VGS = 0 V; Tj = 25 °C ID = -250 µA; VGS = 0 V; Tj = -55 °C ID = -250 µA; VDS = VGS; Tj = 25 °C; see Figure 7; see Figure 8 ID = -250 µA; VDS = VGS; Tj = 150 °C; see Figure 7; see Figure 8 ID = -250 µA; VDS = VGS; Tj = -55 °C; see Figure 7; see Figure 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = -30 V; VGS = 0 V; Tj = 25 °C VDS = -30 V; VGS = 0 V; Tj = 70 °C VGS = 20 V; VDS = 0 V; Tj = 25 °C VGS = -20 V; VDS = 0 V; Tj = 25 °C VGS = -10 V; ID = -9.2 A; Tj = 25 °C; see Figure 9 VGS = -10 V; ID = -9.2 A; Tj = 150 °C; see Figure 9 VGS = -4.5 V; ID = -6.8 A; Tj = 25 °C; see Figure 10; see Figure 9 Dynamic characteristics QG(tot) QGS QGD total gate charge gate-source charge gate-drain charge ID = -9.2 A; VDS = -15 V; VGS = -10 V; Tj = 25 °C; see Figure 11; see Figure 12 42 8 6 nC nC nC Min -30 -27 -1 -0.7 Typ 16 25 26 Max -3 -3.3 -1 -10 -100 -100 19 31 35 Unit V V V V V µA µA nA nA mΩ mΩ mΩ
Static characteristics
PMK35EP
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