PSMN7R8-120PS

PSMN7R8-120PS 25 January 2013 TO -2 20A B N-channel 120V 7.9mΩ standard level MOSFET in TO220 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses TO220 package Suitable for standard level gate drive 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 50.5 167 nC nC Min Typ Max 120 70 349 Unit V A W Static characteristics drain-source on-state resistance 4.7 6.72 7.9 mΩ Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge Avalanche ruggedness non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 386 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description...