BUK9275-100A

BUK9275-100A N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 V 21.7 A 88 W Static characteristics RDSon VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 14 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped 100 mJ 62 64 84 72 75 mΩ mΩ mΩ NXP Semiconductors BUK9275-100A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Desc...