BUK7619-100B
N-channel TrenchMOS standard level FET
Rev. 01 — 10 October 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I TrenchMOS technology I 175 °C rated I Q101 compliant I...