D2 PA K
BUK9615-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011 Product data sheet
1. Product profile
...
D2 PA K
BUK9615-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance
1.3 Applications
Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 120 mJ Conditions Tmb = 25 °C Min -55 Typ 11.5 12 Max 100 75 230 175 14.4 15 Unit V A W °C mΩ mΩ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Static characteristics
NXP Semiconductors
BUK9615-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK9615-100A D2PAK...