BUK9Y104-100B

BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ DC-to-DC converters „ General purpose power switching „ Solenoid drivers 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C Min Typ Max Unit 100 V 14.8 A 59 W Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 25 °C VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 11; see Figure 12 86 91 99 104 mΩ mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 14.8 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; see Figure 13 35 mJ Dynamic characteristics QGD 4.7 nC NXP Semiconductors BUK9Y104-100B N-channel TrenchM...