BUK9Y53-100B
N-channel TrenchMOS logic level FET
Rev. 01 — 30 August 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 complia...
