BUK7E4R0-80E

BUK7E4R0-80E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12V, 24V and 48V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 64 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 80 120 349 Unit V A W Static characteristics drain-source on-state resistance 3.3 4 mΩ Dynamic characteristics QGD gate-drain charge 51 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7E4R0-80E N-channel TrenchMOS standard level FET 2. Pinnin...