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BUK9Y72-80E Dataheets PDF



Part Number BUK9Y72-80E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet BUK9Y72-80E DatasheetBUK9Y72-80E Datasheet (PDF)

LF BUK9Y72-80E 8 May 2013 PA K 56 N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic le.

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LF BUK9Y72-80E 8 May 2013 PA K 56 N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 80 15 45 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 65 78 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 5 A; VDS = 64 V; Tj = 25 °C; Fig. 13; Fig. 14 3.2 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9Y72-80E N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 G mbb076 Simplified outline mb Graphic symbol D S LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Package Name BUK9Y72-80E LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Version SOT669 Type number 7. Marking Table 4. Marking codes Marking code 97280E Type number BUK9Y72-80E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot BUK9Y72-80E Min -10 [1][2] Max 80 80 10 15 15 10.7 61 45 Unit V V V V A A A W -15 - peak drain current total power dissipation Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 2 / 13 NXP Semiconductors BUK9Y72-80E N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 Symbol Tstg Tj IS ISM EDS(AL)S Parameter storage temperature junction temperature Conditions Min -55 -55 Max 175 175 Unit °C °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 15 A; Vsup ≤ 80 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] [3] [4] 16 - 15 61 A A Avalanche ruggedness non-repetitive drain-source avalanche energy [3][4] - 13.4 mJ Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aaj200 ID (A) 120 Pder (%) 80 03aa16 12 8 40 4 0 0 30 60 90 120 150 Tj (°C) 180 0 0 50 100 150 Tmb (°C) 200 Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK9Y72-80E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 3 / 13 NXP Semiconductors BUK9Y72-80E N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 102 IAL (A) 10 003aaj201 1 (1) (2) 10-1 (3) 10-2 10-3 10-2 10-1 1 tAL (ms) 10 Fig. 3. Avalanche rating; avalanche current as a function of avalanche time ID (A) 102 Limit RDSon = VDS / ID tp = 10 us 10 100 us 003aaj202 1 DC 1 ms 10 ms 100 ms 10-1 10-2 1 10 102 VDS (V) 103 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 3.33 Unit K/W BUK9Y72-80E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 4 / 13 NXP Semiconductors BUK9Y72-80E N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 single shot P 003aaj113 δ= tp T tp 10-2 10-6 10-5 10-4 10-3 10-2 10-1 t T tp (s) 1 Fig. 5. Transient thermal impedance from.


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