Document
LF
BUK9Y72-80E
8 May 2013
PA K
56
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• • • •
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• • • •
12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 80 15 45 Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 65 78 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 5 A; VDS = 64 V; Tj = 25 °C; Fig. 13; Fig. 14 3.2 nC
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NXP Semiconductors
BUK9Y72-80E
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3. Ordering information Package Name BUK9Y72-80E LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Version SOT669 Type number
7. Marking
Table 4. Marking codes Marking code 97280E Type number BUK9Y72-80E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot
BUK9Y72-80E
Min -10
[1][2]
Max 80 80 10 15 15 10.7 61 45
Unit V V V V A A A W
-15 -
peak drain current total power dissipation
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
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© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
2 / 13
NXP Semiconductors
BUK9Y72-80E
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56
Symbol Tstg Tj IS ISM EDS(AL)S
Parameter storage temperature junction temperature
Conditions
Min -55 -55
Max 175 175
Unit °C °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 15 A; Vsup ≤ 80 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1] [2] [3] [4]
16
-
15 61
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy
[3][4]
-
13.4
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
003aaj200
ID (A)
120 Pder (%) 80
03aa16
12
8
40
4
0
0
30
60
90
120
150 Tj (°C)
180
0
0
50
100
150
Tmb (°C)
200
Fig. 1.
Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK9Y72-80E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
3 / 13
NXP Semiconductors
BUK9Y72-80E
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56
102 IAL (A) 10
003aaj201
1
(1)
(2)
10-1
(3)
10-2 10-3
10-2
10-1
1
tAL (ms)
10
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
ID (A)
102 Limit RDSon = VDS / ID tp = 10 us 10 100 us
003aaj202
1
DC 1 ms 10 ms 100 ms
10-1
10-2
1
10
102
VDS (V)
103
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 3.33 Unit K/W
BUK9Y72-80E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
8 May 2013
4 / 13
NXP Semiconductors
BUK9Y72-80E
N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56
10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 single shot P
003aaj113
δ=
tp T
tp 10-2 10-6 10-5 10-4 10-3 10-2 10-1
t T tp (s) 1
Fig. 5.
Transient thermal impedance from.