BUK78150-55A

BUK78150-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for standard level gate drive sources 1.3 Applications  12 V and 24 V loads  Automotive and general purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 Min Typ Max Unit 55 5.5 8 V A W Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 150 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 5 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 25 mJ 278 mΩ - 128 150 mΩ NXP Semiconductors BUK78150-55A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G D S D gate drain source drain 1 2 ...