STM4439A

S T M4439A S amHop Microelectronics C orp. Dec 15.2004 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -14A R DS (ON) S uper high dense cell design for low R DS (ON ). 10 @ V G S = -10V 18 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 25 -14 -70 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S T M4439A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-12A V GS = -4.5V, ID = -10A V DS = -5V, V GS = -10V V DS = -5V, ID = -10A Min Typ C Max Unit -30 -1 100 -1.4 -1.9 8.5 12 -50 14 3625 980 705 -2.6 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R es...