C3611

Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 High transition frequency fT Small collector output capacitance (Common base, input open cir- cuited) Cob Wide current range TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 110 V n d stag tinue Collector-emitter voltage le n (Resistor between B and E) VCER 100 V a elifecyc disco Collector-emitter voltage (Base open) VCEO 50 V n u t ed, Emitter-base voltage (Collector open) VEBO 3.5 V roduc d typ Collector current IC 150 mA te tin ur P tinue Peak collector current ICP 300 mA g fo con Collector power dissipation PC 1.2 W win dis 4.0 * in n follo ned Junction temperature des , pla Storage temperature Tj 150 °C Tstg −55 to +150 °C a o inclu type Note) *: With a 100 × 100 × 2 mm Al heat sink M isccontinueindtenance ■ Electrical Characteristics Ta = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base voltage (Emitter open) ten ce Collector-emitter voltage ain nan (Resistor between B and E) VCBO VCER IC = 100 µA, IE = 0 IC = 500 µA, RBE = 470 Ω M inte Collector-emitter voltage (Base open) ma Emitter-base voltage (Collector open) (planed Collector-emitter cutoff curr...