BUK9E15-60E

BUK9E15-60E 11 September 2012 N-channel TrenchMOS logic level FET Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 Min Typ Max 60 54 96 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 11.6 15 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 15 A; VDS = 48 V; Fig. 13; Fig. 14 6.7 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9E15-60E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to dra...