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BUK7E4R6-60E Dataheets PDF



Part Number BUK7E4R6-60E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK7E4R6-60E DatasheetBUK7E4R6-60E Datasheet (PDF)

BUK7E4R6-60E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard leve.

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BUK7E4R6-60E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 100 234 Unit V A W Static characteristics drain-source on-state resistance 3.36 4.6 mΩ Dynamic characteristics QGD gate-drain charge 26.1 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7E4R6-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 1 2 3 Simplified outline mb Graphic symbol D G mbb076 S I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Package Name BUK7E4R6-60E I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 [1] [1] Min -20 -55 -55 Max 60 60 20 100 100 613 234 175 175 Unit V V V A A A W °C °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C [1] - 100 613 A A BUK7E4R6-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 2 / 12 NXP Semiconductors BUK7E4R6-60E N-channel TrenchMOS standard level FET Symbol EDS(AL)S Parameter non-repetitive drain-source avalanche energy Conditions ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 60 V; Tj(init) = 25 °C; unclamped; Fig. 3 [2][3] Min - Max 273 Unit mJ Avalanche ruggedness [1] [2] [3] 200 ID (A) 150 Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aah495 120 Pder (%) 80 03aa16 100 (1) 40 50 0 0 50 100 150 T mb (° C) 200 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature 103 IAL (A) 102 003aah496 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time BUK7E4R6-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 3 / 12 NXP Semiconductors BUK7E4R6-60E N-channel TrenchMOS standard level FET 103 ID (A) 102 Limit RDSon= VDS / ID 003aah497 tp =10 µs 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 single shot P δ= tp T Conditions Fig. 5 Min - Typ - Max 0.64 Unit K/W Rth(j-a) vertical in still air - 65 - K/W 003aah483 tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E4R6-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 4 / 12 NXP Semiconductors BUK7E4R6-60E N-channel TrenchMOS standard level FET 6. Cha.


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