Document
BUK7E4R6-60E
11 September 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package. [1]
Min -
Typ -
Max 60 100 234
Unit V A W
Static characteristics drain-source on-state resistance 3.36 4.6 mΩ
Dynamic characteristics QGD gate-drain charge 26.1 nC
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NXP Semiconductors
BUK7E4R6-60E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
1 2 3
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
I2PAK (SOT226)
3. Ordering information
Table 3. Ordering information Package Name BUK7E4R6-60E I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
[1] [1]
Min -20 -55 -55
Max 60 60 20 100 100 613 234 175 175
Unit V V V A A A W °C °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
-
100 613
A A
BUK7E4R6-60E
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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NXP Semiconductors
BUK7E4R6-60E
N-channel TrenchMOS standard level FET
Symbol EDS(AL)S
Parameter non-repetitive drain-source avalanche energy
Conditions ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 60 V; Tj(init) = 25 °C; unclamped; Fig. 3
[2][3]
Min -
Max 273
Unit mJ
Avalanche ruggedness
[1] [2] [3]
200 ID (A) 150
Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
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120 Pder (%) 80
03aa16
100
(1)
40
50
0
0
50
100
150 T
mb (° C)
200
0
0
50
100
150
Tmb (°C)
200
(1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
103 IAL (A) 102
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(1)
10
(2)
1
(3)
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
Fig. 3.
Single pulse avalanche rating; avalanche current as a function of avalanche time
BUK7E4R6-60E
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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NXP Semiconductors
BUK7E4R6-60E
N-channel TrenchMOS standard level FET
103 ID (A) 102 Limit RDSon= VDS / ID
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tp =10 µs 100 µ s
10
DC 1 ms
1
10 ms 100 ms
10-1 10-1
1
10
VDS (V)
102
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient
1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 single shot
P δ= tp T
Conditions Fig. 5
Min -
Typ -
Max 0.64
Unit K/W
Rth(j-a)
vertical in still air
-
65
-
K/W
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tp
t T
10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp (s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E4R6-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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NXP Semiconductors
BUK7E4R6-60E
N-channel TrenchMOS standard level FET
6. Cha.