BUK7575-55A

TO -22 0A B BUK7575-55A N-channel TrenchMOS standard level FET Rev. 02 — 4 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Low conduction losses due to low on-state resistance  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive and general purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 20.3 A 62 W Static characteristics RDSon VGS = 10 V; ID = 10 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive ID = 11 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 30.3 mJ 150 mΩ - 64 75 mΩ NXP Semiconductors BUK7575-55A N-channel TrenchMOS standard level FET 2. Pinning information Tab...