Document
TO -22 0A B
BUK9524-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 27 January 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 46 105 V A W
Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 46 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 76 mJ 19 20 26 24 mΩ mΩ 21.7 mΩ
NXP Semiconductors
BUK9524-55A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK9524-55A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number
BUK9524-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
2 of 14
NXP Semiconductors
BUK9524-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj VGSM IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature peak gate-source voltage source current peak source current non-repetitive drain-source avalanche energy pulsed; tp ≤ 50 µs Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 46 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -10 -55 -55 -15 Max 55 55 10 46 33 188 105 175 175 15 46 188 76 Unit V V V A A A W °C °C V A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
120 Ider (%) 80
03aa24
120 Pder (%) 80
03na19
40
40
0 0 50 100 150 Tmb (°C) 200
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
BUK9524-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
3 of 14
NXP Semiconductors
BUK9524-55A
N-channel TrenchMOS logic level FET
103 ID (A) 102 Limit R DSon = VDS /I D
03na08
t p = 10 μs 100 μs 10
P δ= tp T
D.C.
1 ms 10 ms 100 ms
tp T
t
1 1 10 VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9524-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
4 of 14
NXP Semiconductors
BUK9524-55A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient vertical in still air ; lead length ≤ 5 mm ; see Figure 4 Conditions Min Typ 60 Max 1.4 Unit K/W K/W
10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1
P
03na07
0.05 0.02 single pulse
tp
δ=
tp T
t T
10−2 10−6
10−5
10−4
10−3
10−2
10−1 tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9524-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
5 of 14
NXP Semiconductors
BUK9524-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter dra.