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BUK9524-55A Dataheets PDF



Part Number BUK9524-55A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK9524-55A DatasheetBUK9524-55A Datasheet (PDF)

TO -22 0A B BUK9524-55A N-channel TrenchMOS logic level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suita.

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TO -22 0A B BUK9524-55A N-channel TrenchMOS logic level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 46 105 V A W Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 46 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 76 mJ 19 20 26 24 mΩ mΩ 21.7 mΩ NXP Semiconductors BUK9524-55A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK9524-55A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number BUK9524-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 27 January 2011 2 of 14 NXP Semiconductors BUK9524-55A N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj VGSM IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature peak gate-source voltage source current peak source current non-repetitive drain-source avalanche energy pulsed; tp ≤ 50 µs Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 46 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -10 -55 -55 -15 Max 55 55 10 46 33 188 105 175 175 15 46 188 76 Unit V V V A A A W °C °C V A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness 120 Ider (%) 80 03aa24 120 Pder (%) 80 03na19 40 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK9524-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 27 January 2011 3 of 14 NXP Semiconductors BUK9524-55A N-channel TrenchMOS logic level FET 103 ID (A) 102 Limit R DSon = VDS /I D 03na08 t p = 10 μs 100 μs 10 P δ= tp T D.C. 1 ms 10 ms 100 ms tp T t 1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9524-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 27 January 2011 4 of 14 NXP Semiconductors BUK9524-55A N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient vertical in still air ; lead length ≤ 5 mm ; see Figure 4 Conditions Min Typ 60 Max 1.4 Unit K/W K/W 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 P 03na07 0.05 0.02 single pulse tp δ= tp T t T 10−2 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9524-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 27 January 2011 5 of 14 NXP Semiconductors BUK9524-55A N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter dra.


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