BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 14 October 2010 Product data sheet
1. Product profile...
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 14 October 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 55 100 204 V A W
Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; Tj = 25 °C; on-state resistance see Figure 11 4.6 5.4 mΩ
NXP Semiconductors
BUK654R6-55C
N-channel TrenchMOS intermediate level FET
Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 100 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C ID = 25 A; VDS = 44 V; VGS ...