BC813C

BC318C — PNP Epitaxial Silicon Transistor September 2007 BC318C PNP Epitaxial Silicon Transistor This device is designed for general purpose amplifier application at collector currents to 800mA. Sourced from process 38. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range Parameter Value 30 20 5 100 -55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO BVCES ICBO hFE VCE(sat) VBE(on) Ccb Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current ...