N-Channel MOSFET
D2
PA K
BUK762R4-60E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profil...
Description
D2
PA K
BUK762R4-60E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 ID = 25 A; VDS = 48 V; VGS = 10 V; see Figure 13; see Figure 14
[1]
Min -
Typ 1.9
Max 60 120 357 2.4
Unit V A W mΩ
Static characteristics
Dynamic characteristics QGD 45.5 nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinni...
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