Dual N-Channel MOSFET
LF
BUK9K12-60E
8 May 2014
PA K
56D
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET
Product data sheet
1. General d...
Description
LF
BUK9K12-60E
8 May 2014
PA K
56D
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
[1]
Min -
Typ -
Max 60 35 68
Unit V A W
Static characteristics FET1 and FET2 drain-source on-state resistance gate-drain charge 9.5 11.5 mΩ
Dynamic characteristics FET1 and FET2 QGD ID = 15 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
-
8.27
-
nC
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NXP Semiconductors
BUK9K12-60E
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET
5. Pinning information
Ta...
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