LF PA K
PSMN3R0-30YL
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK
Rev. 04 — 10 March 2011 Product data sheet
1. Pro...
LF PA K
PSMN3R0-30YL
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK
Rev. 04 — 10 March 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
Class-D amplifiers DC-to-DC converters Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance gate-drain charge VGS = 10 V; ID = 15 A; Tj = 25 °C VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ -
Max Unit 30 100 81 175 V A W °C mΩ
Static characteristics 2.19 3
Dynamic characteristics QGD 5.1 nC
QG(tot)
total gate charge
-
21
-
nC
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 75 mJ
[1]
Continuous current is limited by package.
NXP Semiconductors
PSMN3R0-30YL
N-channel 30 V ...