PSMN4R6-60BS

D2 PA K PSMN4R6-60BS N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 14.8 70.8 266 nC nC mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 5.98 3.74 Max 60 100 211 175 7 4.4 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped [1] Continuous current is limited by package. NXP Semiconductors PSMN4R6-60BS N-channel 6...