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BUK7Y12-55B Dataheets PDF



Part Number BUK7Y12-55B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK7Y12-55B DatasheetBUK7Y12-55B Datasheet (PDF)

BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard level gate dri.

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BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Advanced braking systems (ABS) „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 61.8 A 105 W Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 13; see Figure 12 8.2 12 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 61.8 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 20 A; VDS = 44 V; VGS = 10 V; see Figure 14 129 mJ Dynamic characteristics QGD 14.8 nC NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name BUK7Y12-55B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number BUK7Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 2 of 14 NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 61.8 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped see Figure 3 [1][2][3] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Typ Max 55 55 20 61.8 43.7 247 105 175 175 61.8 247 129 Unit V V V A A A W °C °C A A mJ Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 Source-drain diode Avalanche ruggedness EDS(AL)R - - - J [1] [2] [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK7Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 3 of 14 NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level FET 100 ID (A) 75 003aac507 120 Pder (%) 80 03na19 50 40 25 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature 102 IAL (A) Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac486 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 4 of 14 NXP Semiconductors BUK7Y12-55B N-channel TrenchMOS standard level FET 103 I D (A) 102 Limit RDSon = V DS / ID tp = 10 μs 100 μs 10 1 ms DC 1 10 ms 100 ms 003aad475 10-1 1 10 102 VDS (V) 103 Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max 1.42 Unit K/W 10 Zth (j-mb) (K/W) 1 0.2 0.1 10-1 0.05 0.02 10-2 single shot tp T P 003aac479 δ = 0.5 δ= tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from ju.


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