Document
BUK7Y12-55B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Advanced braking systems (ABS) Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V
61.8 A 105 W
Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 13; see Figure 12 8.2 12 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive ID = 61.8 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 20 A; VDS = 44 V; VGS = 10 V; see Figure 14 129 mJ
Dynamic characteristics QGD 14.8 nC
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7Y12-55B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number
BUK7Y12-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
2 of 14
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 61.8 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped see Figure 3
[1][2][3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Typ Max 55 55 20 61.8 43.7 247 105 175 175 61.8 247 129 Unit V V V A A A W °C °C A A mJ
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2
Source-drain diode
Avalanche ruggedness
EDS(AL)R
-
-
-
J
[1] [2] [3]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information.
BUK7Y12-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
3 of 14
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
100 ID (A) 75
003aac507
120 Pder (%) 80
03na19
50
40
25
0 0 50 100 150 200 Tmb (°C)
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Continuous drain current as a function of mounting base temperature
102 IAL (A)
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aac486
(1)
10
(2)
1
(3)
10-1 10-3
10-2
10-1
1
tAL (ms)
10
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y12-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 April 2010
4 of 14
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
103 I D (A) 102 Limit RDSon = V DS / ID tp = 10 μs 100 μs 10 1 ms DC 1 10 ms 100 ms
003aad475
10-1 1 10
102
VDS (V)
103
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max 1.42 Unit K/W
10 Zth (j-mb) (K/W) 1 0.2 0.1 10-1 0.05 0.02 10-2 single shot
tp T P
003aac479
δ = 0.5
δ=
tp T
t
10-3 10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5.
Transient thermal impedance from ju.