BUK9Y12-55B

BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Advanced braking systems (ABS) „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 V 61.8 A 106 W Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 8.1 9.1 11 12 mΩ mΩ NXP Semiconductors BUK9Y12-55B N-channel TrenchMOS logic level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 129 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 61.8 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche e...