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BUK9E8R5-40E Dataheets PDF



Part Number BUK9E8R5-40E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Datasheet BUK9E8R5-40E DatasheetBUK9E8R5-40E Datasheet (PDF)

BUK9E8R5-40E 11 September 2012 N-channel TrenchMOS logic level FET Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate wi.

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BUK9E8R5-40E 11 September 2012 N-channel TrenchMOS logic level FET Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 40 75 96 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 6.4 8.1 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 20 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 7.3 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9E8R5-40E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 1 2 3 Simplified outline mb Graphic symbol D G mbb076 S I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Package Name BUK9E8R5-40E I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number 4. Marking Table 4. Marking codes Marking code BUK9E8R5-40E Type number BUK9E8R5-40E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot BUK9E8R5-40E Min -10 [1][2] [3] Max 40 40 10 15 75 56 315 96 Unit V V V V A A A W -15 - peak drain current total power dissipation Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 2 / 13 NXP Semiconductors BUK9E8R5-40E N-channel TrenchMOS logic level FET Symbol Tstg Tj IS ISM EDS(AL)S Parameter storage temperature junction temperature Conditions Min -55 -55 Max 175 175 Unit °C °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] [3] [4] [5] 100 ID (A) 75 (1) [3] - 75 315 A A Avalanche ruggedness non-repetitive drain-source avalanche energy [4][5] - 44 mJ Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aah405 120 Pder (%) 80 03aa16 50 40 25 0 0 50 100 150 T mb (° C) 200 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 75A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK9E8R5-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 3 / 13 NXP Semiconductors BUK9E8R5-40E N-channel TrenchMOS logic level FET 102 IAL (A) 10 003aah406 (1) 1 (2) (3) 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time 103 ID (A) 10 2 003aah407 Limit RDSon= V DS / ID tp =10 µ s 100 µ s 10 DC 1 1 ms 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 1.56 Unit K/W Rth(j-a) vertical in still air - 65 - K/W BUK9E8R5-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 4 / 13 NXP Semiconductors BUK9E8R5-40E N-channel TrenchMOS logic level FET 10 Zth(j-mb) (K/W) 1 δ.


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