Document
BUK9E8R5-40E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11
[1]
Min -
Typ -
Max 40 75 96
Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 6.4 8.1 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 20 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
-
7.3
-
nC
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NXP Semiconductors
BUK9E8R5-40E
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
1 2 3
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
I2PAK (SOT226)
3. Ordering information
Table 3. Ordering information Package Name BUK9E8R5-40E I2PAK Description plastic single-ended package (I2PAK); TO-262 Version SOT226 Type number
4. Marking
Table 4. Marking codes Marking code BUK9E8R5-40E Type number BUK9E8R5-40E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot
BUK9E8R5-40E
Min -10
[1][2] [3]
Max 40 40 10 15 75 56 315 96
Unit V V V V A A A W
-15 -
peak drain current total power dissipation
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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NXP Semiconductors
BUK9E8R5-40E
N-channel TrenchMOS logic level FET
Symbol Tstg Tj IS ISM EDS(AL)S
Parameter storage temperature junction temperature
Conditions
Min -55 -55
Max 175 175
Unit °C °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1] [2] [3] [4] [5]
100 ID (A) 75
(1)
[3]
-
75 315
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy
[4][5]
-
44
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
003aah405
120 Pder (%) 80
03aa16
50
40
25
0
0
50
100
150 T
mb (° C)
200
0
0
50
100
150
Tmb (°C)
200
(1) Capped at 75A due to package Fig. 1. Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK9E8R5-40E
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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NXP Semiconductors
BUK9E8R5-40E
N-channel TrenchMOS logic level FET
102 IAL (A) 10
003aah406
(1)
1
(2)
(3)
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
Fig. 3.
Single pulse avalanche rating; avalanche current as a function of avalanche time
103 ID (A) 10
2
003aah407
Limit RDSon= V DS / ID tp =10 µ s 100 µ s 10 DC
1
1 ms 10 ms 100 ms
10-1 10-1
1
10
VDS (V)
102
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 5 Min Typ Max 1.56 Unit K/W
Rth(j-a)
vertical in still air
-
65
-
K/W
BUK9E8R5-40E
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
4 / 13
NXP Semiconductors
BUK9E8R5-40E
N-channel TrenchMOS logic level FET
10 Zth(j-mb) (K/W) 1 δ.