Document
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 17 September 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for standard and logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 40 90 158 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 4.1 5 mΩ
NXP Semiconductors
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 200 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 90 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14
Dynamic characteristics QGD 25.9 nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK625R0-40C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number
BUK625R0-40C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 September 2010
2 of 14
NXP Semiconductors
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 90 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[4][5][6] [3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2
[1] [2] [3]
Min -16 -20 -55 -55 -
Max 40 16 20 90 87 490 158 175 175 90 490 200 -
Unit V V V A A A W °C °C A A mJ J
Source-drain diode
Avalanche ruggedness
[1] [2] [3] [4] [5] [6]
-16V accumulated duration not to exceed 168 hrs. Accumulated pulse duration not to exceed 5mins. Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information.
BUK625R0-40C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 September 2010
3 of 14
NXP Semiconductors
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
160 ID (A) 120
003a a e 777
120 Pder (%) 80
03na19
(1)
80
40
40
0 0 50 100 150 200 Tmb ( C)
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aae888
104 ID (A) 103 Limit RDSon = VDS / ID 10
2
tp =10 μ s 100 μ s
10 DC 1 1 ms 10 ms 100 ms
10-1 10-1
1
10
V DS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK625R0-40C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 September 2010
4 of 14
NXP Semiconductors
BUK625R0-40C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max 0.95 Unit K/W
10 Zth (j.