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BUK625R0-40C Dataheets PDF



Part Number BUK625R0-40C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK625R0-40C DatasheetBUK625R0-40C Datasheet (PDF)

BUK625R0-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard an.

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BUK625R0-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 90 158 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 4.1 5 mΩ NXP Semiconductors BUK625R0-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 200 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 90 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 25.9 nC [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK625R0-40C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number BUK625R0-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 17 September 2010 2 of 14 NXP Semiconductors BUK625R0-40C N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 90 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [4][5][6] [3] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 [1] [2] [3] Min -16 -20 -55 -55 - Max 40 16 20 90 87 490 158 175 175 90 490 200 - Unit V V V A A A W °C °C A A mJ J Source-drain diode Avalanche ruggedness [1] [2] [3] [4] [5] [6] -16V accumulated duration not to exceed 168 hrs. Accumulated pulse duration not to exceed 5mins. Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK625R0-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 17 September 2010 3 of 14 NXP Semiconductors BUK625R0-40C N-channel TrenchMOS intermediate level FET 160 ID (A) 120 003a a e 777 120 Pder (%) 80 03na19 (1) 80 40 40 0 0 50 100 150 200 Tmb ( C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae888 104 ID (A) 103 Limit RDSon = VDS / ID 10 2 tp =10 μ s 100 μ s 10 DC 1 1 ms 10 ms 100 ms 10-1 10-1 1 10 V DS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK625R0-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 17 September 2010 4 of 14 NXP Semiconductors BUK625R0-40C N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max 0.95 Unit K/W 10 Zth (j.


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