2SC1345
Silicon NPN Epitaxial
REJ03G0687-0300 (Previous ADE-208-1052A) Rev.3.00 Sep.10.2005
Application
Low frequency l...
2SC1345
Silicon
NPN Epitaxial
REJ03G0687-0300 (Previous ADE-208-1052A) Rev.3.00 Sep.10.2005
Application
Low frequency low noise amplifier
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C
Rev.3.00 Aug 10, 2005 page 1 of 6
2SC1345
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VBE VCE(sat) fT Cob NF Min 55 50 5 — — 250 — — — — — — Note: 1. The 2SC1345 is grouped by hFE as follows. D E F 250 to 500 400 to 800 600 to 1200 Typ — — — — — — — — 230 — — — Max — — — 0.5 0.5 1200 0.75 0.5 — 3.5 8 1 Unit V V V µA µA V V MHz pF dB dB Test conditions IC = –10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC...