Document
SO
T3
PMF77XN
30 V, single N-channel Trench MOSFET
Rev. 1 — 27 March 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
23
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -12 -
Typ 77
Max 30 12 1.63 97
Unit V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 2 3
D
Simplified outline
Graphic symbol
G S
017aaa253
SOT323 (SC-70)
NXP Semiconductors
PMF77XN
30 V, single N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information Package Name PMF77XN SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 4. PMF77XN
[1] % = placeholder for manufacturing site code
Marking codes Marking code[1] V9%
Type number
5. Limiting values
Table 5. Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS
[1] [2]
[2] [1] [1] [1] [1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj = 25 °C Min -12 -55 -55 -65 Tamb = 25 °C
[1]
Max 30 12 1.63 1.5 1 6 270 350 1920 150 150 150 0.7
Unit V V A A A A mW mW mW °C °C °C A
junction temperature ambient temperature storage temperature source current
Source-drain diode -
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMF77XN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 27 March 2012
2 of 15
NXP Semiconductors
PMF77XN
30 V, single N-channel Trench MOSFET
120 Pder (%) 80
017aaa123
120 Ider (%) 80
017aaa124
40
40
0 −75
−25
25
75
125
Tj (°C)
175
0 −75
−25
25
75
125
Tj (°C)
175
Fig 1.
Normalized total power dissipation as a function of junction temperature
10 Limit RDSon = VDS/ID
Fig 2.
Normalized continuous drain current as a function of junction temperature
017aaa485
ID (.