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PMF77XN Dataheets PDF



Part Number PMF77XN
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PMF77XN DatasheetPMF77XN Datasheet (PDF)

SO T3 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circu.

  PMF77XN   PMF77XN



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SO T3 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ 77 Max 30 12 1.63 97 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 3 D Simplified outline Graphic symbol G S 017aaa253 SOT323 (SC-70) NXP Semiconductors PMF77XN 30 V, single N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMF77XN SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4. Marking Table 4. PMF77XN [1] % = placeholder for manufacturing site code Marking codes Marking code[1] V9% Type number 5. Limiting values Table 5. Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj Tamb Tstg IS [1] [2] [2] [1] [1] [1] [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj = 25 °C Min -12 -55 -55 -65 Tamb = 25 °C [1] Max 30 12 1.63 1.5 1 6 270 350 1920 150 150 150 0.7 Unit V V A A A A mW mW mW °C °C °C A junction temperature ambient temperature storage temperature source current Source-drain diode - Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMF77XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 27 March 2012 2 of 15 NXP Semiconductors PMF77XN 30 V, single N-channel Trench MOSFET 120 Pder (%) 80 017aaa123 120 Ider (%) 80 017aaa124 40 40 0 −75 −25 25 75 125 Tj (°C) 175 0 −75 −25 25 75 125 Tj (°C) 175 Fig 1. Normalized total power dissipation as a function of junction temperature 10 Limit RDSon = VDS/ID Fig 2. Normalized continuous drain current as a function of junction temperature 017aaa485 ID (.


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