Document
Si9405DY
P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
–20
rDS(on) (W)
0.10 @ VGS = –10 V 0.16 @ VGS = –4.5 V
ID (A)
"4.3 "3.4
Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ
S S
SO-8
NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–20 "20 "4.3 "3.3 "20 –2.2 2.5 1.6 –55 to 150
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1202. A SPICE Model data sheet is available for this product (FaxBack document #5102).
Symbol
RthJA
Limit
50
Unit
_C/W
Siliconix S-47958—Rev. H, 15-Apr-96
1
Si9405DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VDS v –5 V, VGS = –4.5 V VGS = –10 V, ID = 2.0 A VGS = –4.5 V, ID = 2.0 A VDS = –15 V, ID = –4.3 A IS = –1.25 A, VGS = 0 V –20 –5 0.07 0.11 6 –0.8 –1.6 0.10 0.16 A W S V –0.5 "100 –2 –25 V nA mA
Symbol
Test Condition
Min
Typa
Max
Unit
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb
rDS(on) gfs VSD
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = –10 V, , RL = 10 W ID ^ –1 1 A, A VGEN = –10 10 V, V RG = 6 W VDS = –10 V, VGS = –10 V, ID = –2.0 A 29 2.7 14 15 30 142 130 70 30 80 200 200 ns 40 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
2
Siliconix S-47958—Rev. H, 15-Apr-96
Si9405DY
Typical Characteristics (25_C Unless Otherwise Noted)
20
Output Characteristics
VGS = 10, 9, 8, 7, 6 V 5V 20
Transfer Characteristics
TC = –55_C 16 I D – Drain Current (A) 25_C 125_C
I D – Drain Current (A)
15
4V 10
12
8
5
3V
4
0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V)
0 0 2 4 6 VGS – Gate-to-Source Voltage (V)
0.20
On-Resistance vs. Drain Current
2200
Capacitance
rDS(on) – On-Resistance ( W )
0.16 VGS = 4.5 V C – Capacitance (pF)
1800
0.12
1400
0.08
VGS = 10 V
1000 Coss 600
Ciss
0.04
Crss 0 0 2 4 6 8 10 12 ID – Drain Current (A) 200 0 5 10 15 20 VDS – Drain-to-Source Voltage (V)
10 VGS – Gate-to-Source Voltage (V) VDS = 10 V ID = 2 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 2 A 1.4
6
rDS(on) – On-Resistance ( W ) (Normalized)
8
1.2
4
1.0
2
0 0 5 10 15 20 25 30 Qg – Total Gate Charge (nC)
0.8 –50
0
50
100
150
TJ – Junction Temperature (_C)
Siliconix S-47958—Rev. H, 15-Apr-96
3
Si9405DY
Typical Characteristics (25_C Unless Otherwise Noted)
20
Source-Drain Diode Forward Voltage
0.30
On-Resistance vs. Gate-to-Source Voltage
rDS(on) – On-Resistance ( W )
10 I S – Source Current (A)
0.24
0.18 ID = 4.3 A 0.12
TJ = 150_C TJ = 25_C 1 0.5 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V)
0.06
0.00 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V)
1.0
Threshold Voltage
25
Single Pulse Power
0.5 VGS(th) Variance (V) Power (W) 150
20
15
0.0 ID = 250 mA –0.5
10
5 –1 –50
0
50 TJ – Temperature (_C)
100
0 0.01 0.1 1 Time (sec) 10 100
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1 0.1 0.05 0.02 Single Pulse
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
0.01 10–5 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec)
1
3
4
Siliconix S-47958—Rev. H, 15-Apr-96
.