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Si9405DY Dataheets PDF



Part Number Si9405DY
Manufacturers TEMIC
Logo TEMIC
Description P-Channel Enhancement-Mode MOSFET
Datasheet Si9405DY DatasheetSi9405DY Datasheet (PDF)

Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.10 @ VGS = –10 V 0.16 @ VGS = –4.5 V ID (A) "4.3 "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Sou.

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Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –20 rDS(on) (W) 0.10 @ VGS = –10 V 0.16 @ VGS = –4.5 V ID (A) "4.3 "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "4.3 "3.3 "20 –2.2 2.5 1.6 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1202. A SPICE Model data sheet is available for this product (FaxBack document #5102). Symbol RthJA Limit 50 Unit _C/W Siliconix S-47958—Rev. H, 15-Apr-96 1 Si9405DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VDS v –5 V, VGS = –4.5 V VGS = –10 V, ID = 2.0 A VGS = –4.5 V, ID = 2.0 A VDS = –15 V, ID = –4.3 A IS = –1.25 A, VGS = 0 V –20 –5 0.07 0.11 6 –0.8 –1.6 0.10 0.16 A W S V –0.5 "100 –2 –25 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = –10 V, , RL = 10 W ID ^ –1 1 A, A VGEN = –10 10 V, V RG = 6 W VDS = –10 V, VGS = –10 V, ID = –2.0 A 29 2.7 14 15 30 142 130 70 30 80 200 200 ns 40 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-47958—Rev. H, 15-Apr-96 Si9405DY Typical Characteristics (25_C Unless Otherwise Noted) 20 Output Characteristics VGS = 10, 9, 8, 7, 6 V 5V 20 Transfer Characteristics TC = –55_C 16 I D – Drain Current (A) 25_C 125_C I D – Drain Current (A) 15 4V 10 12 8 5 3V 4 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) 0 0 2 4 6 VGS – Gate-to-Source Voltage (V) 0.20 On-Resistance vs. Drain Current 2200 Capacitance rDS(on) – On-Resistance ( W ) 0.16 VGS = 4.5 V C – Capacitance (pF) 1800 0.12 1400 0.08 VGS = 10 V 1000 Coss 600 Ciss 0.04 Crss 0 0 2 4 6 8 10 12 ID – Drain Current (A) 200 0 5 10 15 20 VDS – Drain-to-Source Voltage (V) 10 VGS – Gate-to-Source Voltage (V) VDS = 10 V ID = 2 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2 A 1.4 6 rDS(on) – On-Resistance ( W ) (Normalized) 8 1.2 4 1.0 2 0 0 5 10 15 20 25 30 Qg – Total Gate Charge (nC) 0.8 –50 0 50 100 150 TJ – Junction Temperature (_C) Siliconix S-47958—Rev. H, 15-Apr-96 3 Si9405DY Typical Characteristics (25_C Unless Otherwise Noted) 20 Source-Drain Diode Forward Voltage 0.30 On-Resistance vs. Gate-to-Source Voltage rDS(on) – On-Resistance ( W ) 10 I S – Source Current (A) 0.24 0.18 ID = 4.3 A 0.12 TJ = 150_C TJ = 25_C 1 0.5 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) 0.06 0.00 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) 1.0 Threshold Voltage 25 Single Pulse Power 0.5 VGS(th) Variance (V) Power (W) 150 20 15 0.0 ID = 250 mA –0.5 10 5 –1 –50 0 50 TJ – Temperature (_C) 100 0 0.01 0.1 1 Time (sec) 10 100 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–5 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 3 4 Siliconix S-47958—Rev. H, 15-Apr-96 .


IPI80N04S2-H4 Si9405DY AWT1921


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