PSMN3R2-30YLC

LF PA K PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Min -55 Typ - Max Unit 30 100 92 175 V A W °C Static characteristics VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 3.75 4.55 mΩ 2.9 3.5 mΩ NXP Semiconductors PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower Quick reference data …continued Conditions VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 25 A; VDS ...