MOSFET
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010 Product data sheet
1. Product profile
1...
Description
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state VGS = 4.5 V; ID = 10 A; resistance Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 8 31 nC nC
[2]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 3.5 2.8
Max Unit 30 100 114 175 4.1 3.4 V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 200 mJ
NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
[1] [2]
Continuous current is limited by packag...
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