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PMFPB8032XP

NXP Semiconductors
Part Number PMFPB8032XP
Manufacturer NXP Semiconductors
Description 3.7A / 320mV VF P-channel MOSFET
Published Aug 16, 2014
Detailed Description PMFPB8032XP 21 December 2012 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Product data sheet 1. Gene...
Datasheet PDF File PMFPB8032XP PDF File

PMFPB8032XP
PMFPB8032XP

Overview
PMFPB8032XP 21 December 2012 20 V, 3.
7 A / 320 mV VF P-channel MOSFET-Schottky combination Product data sheet 1.
General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • • • • 1.
8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.
65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3.
Applications • • • • Charging ...


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