PMF170XP

PMF170XP 29 October 2013 SO T3 23 20 V, 1 A P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low RDSon Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb 25 °C VGS = -4.5 V; ID = -1 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max -20 12 -1 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 175 200 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMF170XP 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain G 1 2 Simplified outline 3 Graphic symbol D SC-70 (SOT323) S 017aaa094 6. Ordering information Table 3. Ordering information Package Name PMF170XP SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 7. Marking Table 4. Marking codes Marking code [1] Type number PMF170XP [1] ...