PSMN3R9-25MLC

PA K PSMN3R9-25MLC N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. LF 33 1.2 Features and benefits  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching  Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12.5 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 25 A; VDS = 12.5 V; see Figure 12; see Figure 13 2.3 9.7 nC nC Conditions Tj = 25°C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 4.85 3.65 Max 25 70 69 175 5.55 4.15 Unit V A W °C mΩ mΩ Static characteristics [1] Continuous current is limited by package. NXP Semiconductors PSMN3R9-25MLC N-channel 25 V ...