BUK765R0-100E

D2 PA K BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Repetitive avalanche rated  Suitable for thermally demanding environments due to 175 °C rating  True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications  12V, 24V and 48V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; see Figure 13; see Figure 14 [1] Min - Typ 3.9 Max 100 120 357 5 Unit V A W mΩ Static characteristics Dynamic characteristics QGD 65 nC [1] Continuous current is limited by package. NXP Semiconductors BUK765R0-100E N-channel TrenchMOS standard level FET 2. Pinning information Tabl...